Document Type

Article

Date

3-7-2012

Embargo Period

3-12-2012

Keywords

solar cells, drift mobility, chalcopyrite semiconductor

Language

English

Disciplines

Condensed Matter Physics | Electronic Devices and Semiconductor Manufacturing

Description/Abstract

We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn1-xGaxSe2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm^2/Vs and are weakly temperature-dependent from 100–300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

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Author copy of manuscript

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