solar cells, drift mobility, chalcopyrite semiconductor
Condensed Matter Physics | Electronic Devices and Semiconductor Manufacturing
We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn1-xGaxSe2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm^2/Vs and are weakly temperature-dependent from 100–300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm2/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.
Dinca, Steluta A.; Schiff, Eric A.; Shafarman, William N.; Egaas, Brian; Noufi, Rommel; and Young, David L., "Electron drift-mobility measurements in polycrystalline CuIn1-xGaxSe2 solar cells" (2012). Physics. 515.
Author copy of manuscript