Title

Electron drift-mobility measurements in polycrystalline CuIn1-xGaxSe2 solar cells

Author(s)/Creator(s)

Steluta A. Dinca, Syracuse UniversityFollow
Eric A. Schiff, Syracuse UniversityFollow
William N. Shafarman, University of Delaware
Brian Egaas, National Renewable Energy Laboratory
Rommel Noufi, National Renewable Energy Laboratory
David L. Young, National Renewable Energy Laboratory

Document Type

Article

Date

3-7-2012

Keywords

solar cells, drift mobility, chalcopyrite semiconductor

Language

English

Disciplines

Condensed Matter Physics | Electronic Devices and Semiconductor Manufacturing

Description/Abstract

We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn_1-xGa_xSe₂ films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm^2/Vs and are weakly temperature-dependent from 100–300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm²/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

Recommended Citation

Dinca, Steluta A.; Schiff, Eric A.; Shafarman, William N.; Egaas, Brian; Noufi, Rommel; and Young, David L., "Electron drift-mobility measurements in polycrystalline CuIn1-xGaxSe2 solar cells" (2012). Physics - All Scholarship. 515.
https://surface.syr.edu/phy/515

Source

Author copy of manuscript