ORCID
Alison E. Patteson (Koser): 0000-0002-4004-1734
Document Type
Article
Date
Winter 12-28-2010
Language
English
Funder(s)
Penn State MRSEC, REU program, and partially by ONR Grant
Funding ID
NSF-DMR-0820404, N00014-09-1-0221 and N00014-09-1-0309.
Official Citation
A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, N. Samarth; Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B. Appl. Phys. Lett. 27 December 2010; 97 (26): 262104. https://doi.org/10.1063/1.3532845
Disciplines
Physics
Description/Abstract
We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.
Recommended Citation
A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, N. Samarth; Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B. Appl. Phys. Lett. 27 December 2010; 97 (26): 262104. https://doi.org/10.1063/1.3532845
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.
