Document Type
Article
Date
2005
Keywords
microcrystalline silicon, photocurrents
Language
English
Disciplines
Physics
Description/Abstract
We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1–2 cm2 /V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm2/V s.
Recommended Citation
"Hole Drift Mobility Measurements in Microcrystalline Silicon," T. Dylla, F. Finger, and E. A. Schiff, Appl. Phys. Lett. 87, 032103-032105 (2005).
Source
harvested from author's c.v.
Creative Commons License
This work is licensed under a Creative Commons Attribution 3.0 License.
