ORCID

S. A. Dinca: 0000-0002-2779-554X

E. A. Schiff: 0000-0002-4104-7038

Document Type

Article

Date

7-14-2021

Keywords

cadmium telluride solar cells, polycrystalline solar cells, diffusion-limited recombination

Language

English

Funder(s)

National Science Foundation

Funding ID

CBET-1336147, CBET1336134

Disciplines

Condensed Matter Physics | Materials Chemistry

Description/Abstract

In some thin-film solar cells the light-absorbing layer is a mosaic of crystalline grains whose boundaries run from the back to the front of the cell. We used the semiconductor modeling software Sesame to do numerical calculations of the optoelectronic properties of such cells assuming that recombination of minority photocarriers occurs primarily at the grain boundaries. The work complements analytical results for diffusion-limited recombination at grain boundaries and dislocations. We chose idealized n-CdS/p-CdTe solar cells for illustration. We find that the open-circuit voltage, Voc, under illumination declines logarithmically with increasing ratio D/θ2, where D is the ambipolar diffusion constant governing minority-carrier transport and θ is the grain size (from 1 to 10 μm). While a decline in VOC as mobility increases is counterintuitive, this finding is consistent with related analytical results and confirms their utility. However, open-circuit voltages are about 0.04−0.10 V lower than the corresponding analytical estimates. We show that the deficit is mostly a consequence of a recombination shortcut. At open circuit, minority photocarrier currents at points closer to the n-CdS interface than to a grain boundary are directed through the conducting front layers and terminate near the “hot spot” at the intersection with the grain boundary. The shortcut lowers open-circuit voltages by about 0.05 V below the analytical estimates.

ISSN

2574-0962

Source

submission

Download

Share

COinS