Title

Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

Author(s)/Creator(s)

S. Dinca, Syracuse University
Eric A. Schiff, Syracuse UniversityFollow
V. Vlahos, Pennsylvania State University
C. R. Wronski, Pennsylvania State University
Q. Yuan, Syracuse University

Document Type

Conference Document

Date

2003

Keywords

amorphous silicon

Language

English

Disciplines

Physics

Description/Abstract

We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×10-9 cm2/V), hole mobilities reach values as large as 0.01 cm2/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.

Additional Information

First author and SU authors listed for additional authors see the article.

Recommended Citation

"Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon," S. Dinca, G. Ganguly, Z. Lu, E. A. Schiff, V. Vlahos, C. R. Wronski, Q. Yuan, in Amorphous and Nanocrystalline Silicon Based Films - 2003, edited by J.R. Abelson, G. Ganguly, H. Matsumura, J. Robertson, E. A. Schiff (Materials Research Society Symposium Proceedings Vol. 762, Pittsburgh, 2003), pp. 345--350.

Source

harvested from author's c.v.

Creative Commons License

This work is licensed under a Creative Commons Attribution 3.0 License.