Document Type
Article
Date
2006
Keywords
amorphous silicon, solar cells
Language
English
Disciplines
Physics
Description/Abstract
We present temperature-dependent measurements and modeling for a thickness series of hydrogenated amorphous silicon nip solar cells. The comparison indicates that the maximum power density (PMAX) from the as-deposited cells has achieved the hole-mobility limit established by valence bandtail trapping, and PMAX is thus not significantly limited by intrinsic-layer dangling bonds or by the doped layers and interfaces. Measurements of the temperature-dependent properties of light-soaked cells show that the properties of as-deposited and light-soaked cells converge below 250 K; a model perturbing the valence band tail traps with a density of dangling bonds accounts adequately for the convergence effect.
Recommended Citation
"Hole mobility limit of amorphous silicon solar cells," Jianjun Liang, E. A. Schiff, S. Guha, Baojie Yan, and J. Yang, Appl. Phys. Lett. 88 063512-063514 (2006).
Source
harvested from author's c.v.
Creative Commons License
This work is licensed under a Creative Commons Attribution 3.0 License.
