Document Type

Article

Date

2004

Embargo Period

10-16-2010

Keywords

disordered silicons

Language

English

Disciplines

Physics

Description/Abstract

Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width E, the band mobility μ0, and the attempt-toescape frequency ν. Low-temperature measurements indicate a value around μ0 = 1 cm2 V−1 s−1 for both the conduction and valence bands over the entire range of materials. High temperature-measurements for electrons in a-Si:H suggest a larger value of 7 cm2 V−1 s−1. These properties and those of the frequency ν are discussed as possible attributes of a mobility edge.

Source

harvested from author's c.v.

Creative Commons License

Creative Commons Attribution 3.0 License
This work is licensed under a Creative Commons Attribution 3.0 License.

Included in

Physics Commons

Share

COinS