Document Type

Article

Date

2005

Embargo Period

10-16-2010

Keywords

microcrystalline silicon, photocurrents

Language

English

Disciplines

Physics

Description/Abstract

We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1–2 cm2 /V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm2/V s.

Source

harvested from author's c.v.

Creative Commons License

Creative Commons Attribution 3.0 License
This work is licensed under a Creative Commons Attribution 3.0 License.

Included in

Physics Commons

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