Document Type

Conference Document

Date

2003

Embargo Period

10-16-2010

Keywords

amorphous silicon, solar cells

Language

English

Disciplines

Physics

Description/Abstract

We describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail properties. We show how hole drift-mobility measurements and measurements of the temperature-dependence of the open-circuit voltage VOC can be used to estimate the parameters, and we present VOC(T) measurements. We compared the power density under solar illumination calculated with this model with published results for as-deposited a-Si:H solar cells. The agreement is within 4% for a range of thicknesses, suggesting that the power from as-deposited cells is close to the bandtail limit.

Additional Information

First author and SU authors listed for additional authors see the article.

Source

harvested from author's c.v.

Creative Commons License


This work is licensed under a Creative Commons Attribution 3.0 License.

Included in

Physics Commons

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