Document Type

Conference Document

Date

2009

Embargo Period

10-15-2010

Keywords

amorphous silicon, nanocrystalline silicon

Language

English

Disciplines

Physics

Description/Abstract

Hole drift mobilities in hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are in the range of 10-3 to 1 cm2/Vs at room-temperature. These low drift mobilities establish corresponding hole mobility limits to the power generation and useful thicknesses of the solar cells. The properties of as-deposited a-Si:H nip solar cells are quite close to their hole mobility limit, but the corresponding limit has not been examined for nc-Si:H solar cells. We explore the predictions for nc-Si:H solar cells based on parameters and values estimated from hole drift-mobility and related measurements. The indicate that the hole mobility limit for nc-Si:H cells corresponds to an optimum intrinsic-layer thickness of 2-3 2m, whereas the best nc-Si:H solar cells (10% conversion efficiency) have thicknesses around 2 2m.

Source

harvested from author's c.v.

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