Document Type

Article

Date

2011

Embargo Period

5-1-2012

Keywords

Digital circuits, FinFETs, Integrated circuit modeling, Inverters, Low voltage, Random access memory, Silicon on insulator technology

Language

English

Disciplines

Electrical and Computer Engineering

Description/Abstract

In summary, we have compared SOI and BOI FinFET device characteristics and the performance of digital circuits designed with those devices. For low voltage supply, SHE is modest in both devices and during digital circuit operations. SOI FinFET CMOS inverter and SRAM cell characteristics are very similar to BOI ones. Considering the lesser fabrication complexity, SOI FinFET thus would be more preferable than BOI FinFET for the design of low voltage digital circuits.

 
 

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