Document Type
Article
Date
2011
Keywords
Digital circuits, FinFETs, Integrated circuit modeling, Inverters, Low voltage, Random access memory, Silicon on insulator technology
Language
English
Disciplines
Electrical and Computer Engineering
Description/Abstract
In summary, we have compared SOI and BOI FinFET device characteristics and the performance of digital circuits designed with those devices. For low voltage supply, SHE is modest in both devices and during digital circuit operations. SOI FinFET CMOS inverter and SRAM cell characteristics are very similar to BOI ones. Considering the lesser fabrication complexity, SOI FinFET thus would be more preferable than BOI FinFET for the design of low voltage digital circuits.
Recommended Citation
P. Feng and P. Ghosh, "Comparison of silicon-on-insulator and Body-on-Insulator FinFET based digital circuits with consideration on self-heating effects," in 2011 International Semiconductor Device Research Symposium, ISDRS 2011, December 7, 2011 - December 9, 2011, College Park, MD, United states, 2011.
